توضیحات
Mfr: Infineon Technologies
Series: CoolMOS™ G7
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current – Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 210µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
FET Feature: –
Power Dissipation (Max): 76W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-10-1
Package / Case: 10-PowerSOP Module
Base Product Number: IPDD60
نقد و بررسیها
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